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Ion implantation phenomena in 4H-silicon carbide - CERN
Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant
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Controlled Ion Implantation Into Silicon Carbide Using
Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon
Diffusion Of Gases And Alkane Chains In Silicon Carbide
(207g) Atomistic Simulations Of Adsoprtion And Diffusion Of Gases And Alkane Chains In Silicon Carbide NanotubesNRCIFCI
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6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 C