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silicon carbide ingots manufacture

# 2010/0147212. MONOCRYSTALLINE SILICON CARBIDE INGOT,

2010617-Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is le

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Title (en) METHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES Title (de) VERFAHREN ZUR HERSTELLUNG GROSSER,

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Ingot, Silicon Carbide Substrate, And Producing Ingot (

2014102-An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide

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US Patent # 8,673,254. Monocrystalline silicon carbide ingot,

2014318-Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is le

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US Patent # 8,178,389. Monocrystalline silicon carbide ingot,

2012515-Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is le

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to manufacture large uniform ingots of silicon carbide by

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon

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(Silicon Carbide Ingot) - [GT++]Gregtech++ - MC|

Patent application title: SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT Inventors

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of growth processes of ingots of silicon carbide single

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