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autoclave made of semiconducting silicon carbide ceramic

Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

during the sintering of aluminium silicon carbide

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in high-temperature furnaces for silicon carbide

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Oxidation of Carbon Fiber‐Reinforced Silicon Carbide Matrix

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of Nitric Oxide on Asbestos and Silicon Carbide Fibers

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Cree to Invest $1 Billion to Expand Silicon Carbide Capacity

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Bano, E; Ouisse, T; Leonhard, C; Gölz, A; Kamienski, E G Stein von, 1997: High-field Fowler - Nordheim stress of n-type silicon carbide

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0) carbon/silicon-carbide nanotube heterojunction

: A two-probe system of the heterojunction formed by an(8,0)carbon nanotube(CNT)and an(8,0)silicon carbide nanotube(SiCNT)was established based

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and oxidation of silicon carbide on the nitride bond in

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properties in graphene/two-dimensional silicon carbide van

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of Ultra Low Silicon Hyper-Eutectic Flake Graphite Cast Iron

Plate type carbide forms when silicon content is low and with quick Fig. 5 Microstructure of ϕ30 × 250 mm T.P. (Si0.13%–

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of defects in silicon carbide homoepitaxial wafer -

2019516-IEC63068-Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxial

of defects in silicon carbide homoepitaxial wafer -

2019516-IEC63068-1Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxia

Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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