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METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE

Class name: Active solid-state devices (e.g.,depositing another layer on the silicon carbide a substrate including a bulk material;an

Development of a model of silicon carbide thermodestruction

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Effect of α-Alumina as a Seed in Alumina/Silicon Carbide

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Semiconductors: Silicon Carbide and Related Materials | Book

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection

Formats and Editions of Silicon carbide, a high temperature

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Semiconductors: Silicon Carbide and Related Materials | Book

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection

oxygen activation by solid iron doped silicon carbide

Sustained molecular oxygen activation by iron doped silicon carbide (Fe/SiC)powder by arc plasma irradiation of silicon bulk in methane-based atmospheres

characteristics of n-type polycrystalline silicon carbide

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Cree to invest $1B to expand silicon carbide capacity to meet

As part of its long-term growth strategy, Cree, Inc. will invest up to $1 billion in the expansion of its silicon carbide capacity with the

the Primitive Form of Rhombohedral Silicon Carbide (9R-SiC

Silicon Carbide (9R-SiC): A Pathway toward whether this polytype is stable as a bulk other SiC polytypes, and therefore could be

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Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for

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3M Scotch-Brite XL-WL Deburring Wheel 18278, Silicon Carbide,

silicon carbide as the abrasive material and has another important component of these is the Trade Name: Scotch-Brite Wheel Diameter: 6 in

Temperature Measurement and Control for Silicon Carbide

The heating temperature of the silicon carbide sublimation growth crucible is changed by adjusting the output power of the medium frequency induction coil,

and testing of bulk micromachined silicon carbide

Forgot Institutional Username/Password? Other SiC piezoresistors and fabricated by bulk microunderlying 100-mm diameter (100) silicon substrate

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A silicon carbide room-temperature single-photon source —

quantum dots, diamond colour centres and others. device-friendly material, silicon carbide (SiC). bulk without resorting to the use of a cavity

performance of silicon carbide bulks consolidated by flash

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3M Scotch-Brite XP-WL Deburring Wheel 60317, Silicon Carbide,

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Neutron Response of Semi-Insulating Bulk Silicon Carbide

Forgot Institutional Username/Password? Other (HTCVD) grown semi-insulating bulk SiC wafer has intrinsic efficiency 1.7 times that of silicon

OF FABRICATING EPITAXIAL SILICON CARBIDE STRUCTURES WITH

Class name: Active solid-state devices (e.g.,another silicon carbide sub-layer in the presencea substrate including a bulk material; anda stack

Formats and Editions of Silicon carbide : a high temperature

Showing all editions for Silicon carbide : a high temperature semi-conductor ; proceedings of the Conference on Silicon Carbide, Boston, Mass., April 2

United Silicon Carbide Inc. | Simply More Efficient

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Distinction of di ff erent silicon carbide polytypes using

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Boron Carbide Nozzle,Spiral Spray Nozzle,Silicon Carbide

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