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Silicon carbide (SiC) is a material of great technological interest for engineering applications concerning hostile environments where silicon-based component

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Oxygen was implanted into cubic (3C) silicon carbide in order to produce a buried insulating layer. Doses between 1 x 10 sup1/sup sup7/

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Bare and boron-doped cubic silicon carbide nanowires for

cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-The centered at 188eV corresponds to B element and the at 284

Rapid transformation of hexagonal to cubic silicon carbide (

201698-Silicon carbide powder was successfully transformed from hexagonal SiC into cubic SiC using the electric discharge assisted mechanical milli

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2014718-In this work we show that cubic phase silicon carbide nanoparticles with active quantum elements for next generation quantum sensing and

crystal cavities in cubic (3C) polytype silicon carbide

Rundquist, J Provine, Kassem Alassaad, Gabriel Ferro, and Jelena Vučković, Photonic crystal cavities in cubic (3C) polytype silicon carbide films,

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ion induced recrystallization in cubic silicon carbide:

3C-SiC single crystals have been initially irradiated in the nuclear energy loss regime with 100keV Fe ions to fluences ranging from 4×10 sup13/

Cubic silicon carbide avalanche photodiodes

Silicon carbide avalanche photodiodes are receiving significant interest for detection of low levels of ultraviolet light. The primary limitation of 3C-SiC is

Room Temperature Quantum Emission from Cubic Silicon Carbide

2014718-In this work we show that cubic phase silicon carbide nanoparticles with active quantum elements for next generation quantum sensing and

crystal cavities in cubic (3C) polytype silicon carbide

Rundquist, J Provine, Kassem Alassaad, Gabriel Ferro, and Jelena Vučković, Photonic crystal cavities in cubic (3C) polytype silicon carbide films,

resistances of ͗ 111 ͘ tilt GBs in cubic silicon

Download scientific diagram | Calculated thermal resistances of ͗ 111 ͘ tilt GBs in cubic silicon carbide ͑ inset: the associated distribution

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Properties and Deformation of Cubic Silicon Carbide Micro

pWe performed microcompression tests on silicon carbide (spanspanSiC/span/span) pillars with diameters ranging from 4.7 down to 0.65 μ

p-type Hydrogenated Nanocrystalline Cubic Silicon Carbide

Aluminum doped p-type hydrogenated nanocrystalline cubic silicon carbide (Al-doped p-nc-3C-SiC:H) thin films were successfully deposited by very high

Infrared Properties of Cubic Silicon Carbide Films

Films of cubic silicon carbide have been grown by the reaction of methane with a high-purity silicon surface at 1300\ifmmode^\circ\else\text

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Nucleation Control of Cubic Silicon Carbide on 6H- Substrates

20111128- supersaturation, and Si/C ratio are key elements in controlled 3C-SiC defects on Hall and magnetoresistivity effects in cubic silicon c

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Silicon Carbide in Microsystem Technology — Thin Film Versus

This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with an introduction into the wide bandgap (WBG) materials

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Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

Sublimation Growth and Performance of Cubic Silicon Carbide

Control of the homoepitaxial 6H-SiC growth is a key element in the In order to analyze the epitaxial growth of cubic silicon carbide by

Cs and Ag co-incorporation in cubic silicon carbide

Cs and Ag co-incorporation in cubic silicon carbide Alejandro Londono-Previous considerations of Ag and Cs in SiC have focused on the element

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E. (2009). Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications. Journal of

Bare and boron-doped cubic silicon carbide nanowires for

cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and To confirm the existence of B element in B-doped cubic SiC NWs,

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