Bulk silicon carbide (SiC) is a very promising material system for bio- Near-infraredNanocrystalCarbideIrradiancePhotoluminescenceNanocrystallineOptical
silicon, silicon carbide and DLC coated field emitters for
Study of porous silicon, silicon carbide and DLC coated field emitters for pressure sensor application Article in Solid-State Electronics 45(6):997-10
200811- Silicon Carbide Emitter Turn-Off Thyristor Article Details Other Related Research A novel MOS-controlled SiC thyristor device, the SiC emit
and Darlington transistors in 4-hydrogen-silicon carbide
High voltage implanted-emitter bipolar junction transistors and Darlington transistors in 4-hydrogen-silicon carbide High voltage implanted-emitter bipolar
Lu Cai, Kaikai Du, Yurui Qu, Hao Luo, Meiyan Pan, Min Qiu, and Qiang Li, Nonvolatile tunable silicon-carbide-based midinfrared thermal emitter
Silicon Carbide Emitter Turn-Off Thyristor
Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of
and photon collection of silicon carbide quantum emitters
silicon carbide (SiC) nanocrystals coupled to a planar hyperbolic metamaterialThe design is based on positioning the single photon emitters within the
an emitter region formed of silicon carbide - Patent #
A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film in contact with the
【PDF】Cells With Hydrogenated Amorphous Silicon Carbide Emitter
4, NO. 6, NOVEMBER 2014 Optical Enhancement of Silicon Heterojunction Solar Cells With Hydrogenated Amorphous Silicon Carbide Emitter Dong Zhang, Dimitrios
of flexible n-type silicon carbide nanoneedle emitters
Temperature-dependent field emission of flexible n-type silicon carbide nanoneedle emitters on ResearchGate, the professional network for scientists. Tempe
【LRC】infrared single photon emitters in ultrapure silicon carbide
Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov
Activation of a multi-emitter silicon carbide p-n junction
A technique is described for fabricating a novel type of cold cathode comprising an array of electron emitters formed from a single p-n junction of
Method for growing beta-silicon carbide nanorods, and
2001424-A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different ki
Bright and photostable single-photon emitter in silicon carbide
We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling
2009310-An ionizer emitter electrode is ideally formed of or at least partially coated with a carbide material, wherein the carbide material is sele
single photon emitters in ultrapure silicon carbide (1407
Quantum emitters hosted in crystalline lattices are highly attractive IrradianceNear-infraredLasersIntensityCarbideAvalanche photodiodeDiamondQuantum
photon source at telecom range in cubic silicon carbide |
2018105-emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. In the infrared range, one of the SPEs in 3C-SiC is well known
【PDF】SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS
com/reports/1911435/ SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS.particularly in this work, high temperature pressure sensors and IR emitters
Emitters Based on Dopant Transitions in 6H-Silicon Carbide
(2008) Wang et al. International Journal of Power Management Electronics. Read by researchers in: 100% Electrical and Electronic Engineering. A novel MOS-
silicon/porous silicon carbide as an electron emitter -
2004720-Method of fabricating a cathodo-/electro-luminescent device using a porous silicon/porous silicon carbide as an electron emitter 6764368 Met
Silicon carbide bipolar junction transistors having epitaxial
2007124-Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the
【LRC】infrared single photon emitters in ultrapure silicon carbide
Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov
Silicon Carbide Emitter Turn-Off Thyristor
Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of
Emitters Based on Dopant Transitions in 6H-Silicon Carbide
Far infrared or terahertz (040.2235) PhotoconductiveU. Jepsen, “Chemical recognition in terahertz temperature-grown GaAs photoconductive emitters,”
Emitter-Cavity Coupling in Hybrid Silicon Carbide-Nanodiamond
Emitter-Cavity Coupling in Hybrid Silicon Carbide-Nanodiamond Microdisk Resonators on ResearchGate, the professional network for scientists. Emitter-Cavit
with optically active spins in ultrapure silicon carbide |
Vacancy-related centres in silicon carbide are attracting growing et al. Engineering near-infrared single-photon emitters with optically
silicon carbide emitters in infrared or terahertz in uae
Terahertz time-domain spectroscopy - Wikipedia
Surface emitters[edit] When an ultra-short (100 femtoseconds or shorter) Exploring dynamics in the far-infrared with terahertz spectroscopy (PDF)
by means of antireflective amorphous silicon carbide layers
Emitter saturation current densities ( J Oe ) of phosphorus-diffused planar c - Si solar cell emitters passivated by siliconcarbide ( Si C x ) layers
Silicon carbide IR-emitter heating device and method for de
20031216-A method and a device for removing molded soft contact lenses, high-precision intraocular lenses and the like, from the individual molds in
near-infrared silicon carbide nanocrystalline emitters
Bulk silicon carbide (SiC) is a very promising material system for bio- Near-infraredNanocrystalCarbideIrradiancePhotoluminescenceNanocrystallineOptical
silicon, silicon carbide and DLC coated field emitters for
Study of porous silicon, silicon carbide and DLC coated field emitters for pressure sensor application Article in Solid-State Electronics 45(6):997-10
Silicon Carbide Emitter Turn-Off Thyristor (Journal Article)
200811- Silicon Carbide Emitter Turn-Off Thyristor Article Details Other Related Research A novel MOS-controlled SiC thyristor device, the SiC emit
and Darlington transistors in 4-hydrogen-silicon carbide
High voltage implanted-emitter bipolar junction transistors and Darlington transistors in 4-hydrogen-silicon carbide High voltage implanted-emitter bipolar
tunable silicon-carbide-based midinfrared thermal emitter
Lu Cai, Kaikai Du, Yurui Qu, Hao Luo, Meiyan Pan, Min Qiu, and Qiang Li, Nonvolatile tunable silicon-carbide-based midinfrared thermal emitter
Silicon Carbide Emitter Turn-Off Thyristor
Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of
and photon collection of silicon carbide quantum emitters
silicon carbide (SiC) nanocrystals coupled to a planar hyperbolic metamaterialThe design is based on positioning the single photon emitters within the
an emitter region formed of silicon carbide - Patent #
A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film in contact with the
【PDF】Cells With Hydrogenated Amorphous Silicon Carbide Emitter
4, NO. 6, NOVEMBER 2014 Optical Enhancement of Silicon Heterojunction Solar Cells With Hydrogenated Amorphous Silicon Carbide Emitter Dong Zhang, Dimitrios
of flexible n-type silicon carbide nanoneedle emitters
Temperature-dependent field emission of flexible n-type silicon carbide nanoneedle emitters on ResearchGate, the professional network for scientists. Tempe
【LRC】infrared single photon emitters in ultrapure silicon carbide
Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov
Activation of a multi-emitter silicon carbide p-n junction
A technique is described for fabricating a novel type of cold cathode comprising an array of electron emitters formed from a single p-n junction of
Method for growing beta-silicon carbide nanorods, and
2001424-A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different ki
Bright and photostable single-photon emitter in silicon carbide
We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling
deposition silicon carbide - Patent # 7501765 - PatentGenius
2009310-An ionizer emitter electrode is ideally formed of or at least partially coated with a carbide material, wherein the carbide material is sele
single photon emitters in ultrapure silicon carbide (1407
Quantum emitters hosted in crystalline lattices are highly attractive IrradianceNear-infraredLasersIntensityCarbideAvalanche photodiodeDiamondQuantum
photon source at telecom range in cubic silicon carbide |
2018105-emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. In the infrared range, one of the SPEs in 3C-SiC is well known
【PDF】SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS
com/reports/1911435/ SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS.particularly in this work, high temperature pressure sensors and IR emitters
Emitters Based on Dopant Transitions in 6H-Silicon Carbide
(2008) Wang et al. International Journal of Power Management Electronics. Read by researchers in: 100% Electrical and Electronic Engineering. A novel MOS-
silicon/porous silicon carbide as an electron emitter -
2004720-Method of fabricating a cathodo-/electro-luminescent device using a porous silicon/porous silicon carbide as an electron emitter 6764368 Met
Silicon carbide bipolar junction transistors having epitaxial
2007124-Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the
【LRC】infrared single photon emitters in ultrapure silicon carbide
Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov
Silicon Carbide Emitter Turn-Off Thyristor
Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of
Emitters Based on Dopant Transitions in 6H-Silicon Carbide
Far infrared or terahertz (040.2235) PhotoconductiveU. Jepsen, “Chemical recognition in terahertz temperature-grown GaAs photoconductive emitters,”
Emitter-Cavity Coupling in Hybrid Silicon Carbide-Nanodiamond
Emitter-Cavity Coupling in Hybrid Silicon Carbide-Nanodiamond Microdisk Resonators on ResearchGate, the professional network for scientists. Emitter-Cavit
with optically active spins in ultrapure silicon carbide |
Vacancy-related centres in silicon carbide are attracting growing et al. Engineering near-infrared single-photon emitters with optically
tunable silicon-carbide-based midinfrared thermal emitter
Title and Abstract All text Authors• Use these formats for best results: Smith or J Smi